杜路路

时间:2019-09-10 作者: 来源:万博体育maxbextx手机注册-首頁 浏览:1902



杜路路,女,1990.11工学博士,研究方向:微电子器件

教育经历:

2014.09-2019.06    山东大学   微电子学与固体电子学专业     博士

2010.09-2014.06  山东理工大学       物理学                 学士

科研成果:

发表论文:

1.  Du, L., Liu, Y., Mu, W., Yan, S., Wang, X., Xin, G., Jia, Z., Tao, X., Xu, M., Xin, Q., Song, A. (2019) High Performance Ga2O3 Diode     Based on Tin Oxide Schottky Contact. IEEE Electr. Device L., 40(3), 451-454.

2.  Du, L., Liu, Y., Liang, G., Mu, W., Wang, X., Xin, G., Jia, Z., Tao, X., Xu, M., Xin, Q., Song, A. Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode.  Semicond. Sci. Tech. doi.org/10.1088/1361-6641/ab1721.

3.  Du, L., Zhang, J., Li, Y., Xu, M., Wang, Q., Song, A., & Xin, Q. (2018). High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO. IEEE Trans. Electron Devices. 65(10), 4326-4333.

4.  Du, L., He, D., Liu, Y., Xu, M., Wang, Q., Xin, Q., & Song, A. (2018). Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte. IEEE Electr. Device L. 39(9), 1334-1337

5.  Du, L., Li, H., Yan, L., Zhang, J., Xin, Q., Wang, Q., & Song, A. (2017). Effects of substrate and anode metal annealing on InGaZnO Schottky diodes. Appl. Phys. Lett. 110(1), 011602.

6. Ma, P., Du, L., Wang, Y., Jiang, R., Xin, Q., Li, Y., & Song, A. (2018). Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric. Appl. Phys. Lett. 112(2), 023501.

7.  Liu, Y., Du, L., Liang, G., Mu, W., Jia, Z., Xu, M., ... & Song, A. (2018). Ga2O3 field-effect-transistor-based solar-blind photodetector with fast response and high photo-to-dark current ratio. IEEE Electr. Device L.

申请专利:

1.  辛倩,杜路路,宋爱民,杜军. 一种低成本制备双电层薄膜晶体管的工艺, 中国,申请号:201810825963.3, 2018.

2.  辛倩,杜路路,徐明升,宋爱民. 一种氧化镓半导体肖特基二极管及其制作方法, 授权专利号:CN 209266413 U2019.08.16

 

返回原图
/

Baidu
sogou